Title :
VIA-2 high-gain InP/InGaAs n-p-n heterojunction bipolar transistors grown by gas-source MBE
Author :
Nottenburg, R.N. ; Temkin, H. ; Panish, M.B.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Current density; Doping; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Iron; Molecular beam epitaxial growth; Photoconducting materials; Switches; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22822
