Title :
VIA-7 sputter Ni-P as an ohmic contact to n-InP, p-InGaAs and as a diffusion barrier
Author :
Appelbaum, A. ; Robbins, M. ; Schrey, F.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Amorphous materials; Contact resistance; Crystallization; Electrons; Gallium arsenide; Laser transitions; Ohmic contacts; Quantum well devices; Quantum well lasers; Resonant tunneling devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22827
