The SINFET—A Schottky injection MOS-gated power transistor

A new MOS-gated power device, the Schottky injection FET (SINFET), is described in this paper. The device offers 6 times higher current handling capability than conventional n-channel power LDMOS transistors of comparable size and voltage capability and still maintains a comparable switching speed. The low on-resistance is obtained by conductivity modulation of the high-resistivity n- drift region using a Schottky injector. Since only a small number of minority carriers are injected, the speed of the device is not degraded substantially and high latchup resistance is achieved. Breakdown voltages and specific on-resistance observed on typical devices are 170 V and 0.01 Ω . cm², respectively. Gate-turn off times are of the order of 30 ns. Two-dimensional simulation and experimental results comparing the SIN-FET with the LDMOST and lateral insulated gate transistor (LIGT) are presented.