DocumentCode :
1111528
Title :
n-channel lateral insulated gate transistors: Part I—Steady-state characteristics
Author :
Pattanayak, Deva N. ; Robinson, A.L. ; Chow, T. Paul ; Adler, Michael S. ; Baliga, B.Jayant ; Wildi, Eric J.
Author_Institution :
General Electric Corporate Research and Development, Schenectady, NY
Volume :
33
Issue :
12
fYear :
1986
fDate :
12/1/1986 12:00:00 AM
Firstpage :
1956
Lastpage :
1963
Abstract :
The basic physics of the steady-state characteristics of the lateral insulated gate transistor (LIGT) is discussed. Results from a tWo-dimensional computer simulation Of representative LIGT structures are presented. Several Structural and process enhancements to the basic LIGT structure to increase the current handling capability and suppress latchup are pointed out. Experimental results of the steady-state characteristics of a variety of LIGT test structures are presented and analyzed. The static latching aspect of LIGT is discussed insome detail. LIGT devices employing either a buried layer or surface shorts are shown to current limit rather than latching up.
Keywords :
Anodes; Cathodes; Charge carrier processes; Computer simulation; Insulation; MOSFETs; Physics; Steady-state; Testing; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22853
Filename :
1486070
Link To Document :
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