Title :
Enhanced CMOS for analog-digital power IC applications
Author :
Dolny, Gary M. ; Schade, Otto H., Jr. ; Goldsmith, Barry ; Goodman, Lawrence A.
Author_Institution :
RCA Laboratories, David Sarnoff Research Center, Princeton, NJ
fDate :
12/1/1986 12:00:00 AM
Abstract :
Elementary process additions to 2-3-µm polygate CMOS provide enhanced high-voltage MOSFET´s and broadband complimentary bipolars. This allows monolithic integration of a modern logic family and quality analog function with high-voltage high-current buffers and drivers. The technology is suitable for data conversion, telecommunication, analog switch, and industrial IC applications where low-voltage digital and analog control circuitry must be interfaced to high-voltage high-current outputs.
Keywords :
Analog-digital conversion; CMOS logic circuits; CMOS process; CMOS technology; Data conversion; Driver circuits; Monolithic integrated circuits; Power integrated circuits; Switches; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22857
