A new integrated silicon gate technology combining bipolar linear, CMOS logic, and DMOS power parts

This paper describes a new mixed technology, called Multipower BCD, that, starting from the merging of the VDMOS silicon gate process with the conventional junction isolation process, allows the integration on a single chip of bipolar linear, CMOS logic, and DMOS power functions. The architecture of the process was chosen to optimize the power part, which generally occupies the most chip area. With the DMOS device, many other signal components have been obtained whose electrical and structural characteristics are discussed in relation to some process variables. Many test vehicles have been processed to evaluate the different structures and a first electrical application of the technology is indicated.