DocumentCode :
1111638
Title :
Fabrication and optical-switching results on the integrated light-triggered and quenched static induction thyristor
Author :
Nishizawa, Jun-ichi ; Tamamushi, Takashige ; Nonaka, Ken-ichi ; Watanabe, Hiraku
Author_Institution :
Tohoku University, Sendai, Japan
Volume :
33
Issue :
12
fYear :
1986
fDate :
12/1/1986 12:00:00 AM
Firstpage :
2031
Lastpage :
2040
Abstract :
An integrated structure of the light-triggered and light-quenched (LTQ) static induction (SI) thyristor is introduced and is fabricated by the combination of the SI thyristor and SI transistor process technology. The device consists of a buried-gate light triggered (LT) SI thyristor and a p,channel surface gate static induction photo-transistor (SIPT). An anode voltage VAK of 500 V at an anode current IAK of 1 A (600 A/cm2: channel current density) is optically switched with a triggering power of 
mW/cm2(92 µW) and a quenching power of 
mW/cm2(110 µW) in a turn-on time of 0.7 µs and a turnoff delay time of 1.0 µs. The integrated LTQ SI thyristor is a novel type of self-turn-off power device that is turned on and off by optical means.
mW/cm2(92 µW) and a quenching power of mW/cm2(110 µW) in a turn-on time of 0.7 µs and a turnoff delay time of 1.0 µs. The integrated LTQ SI thyristor is a novel type of self-turn-off power device that is turned on and off by optical means.Keywords :
Anodes; Circuits; Current density; Delay effects; Electrodes; Integrated optics; Optical device fabrication; Optical devices; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22863
Filename :
1486080
Link To Document :
