DocumentCode :
1111758
Title :
Cost-effective high-performance monolithic X-band low-noise amplifiers
Author :
Wang, David C. ; Pauley, Robert G. ; Wang, Shing-Kuo ; Liu, Louis C T
Author_Institution :
Hughes Aircraft Company, Torrance, CA
Volume :
33
Issue :
12
fYear :
1986
fDate :
12/1/1986 12:00:00 AM
Firstpage :
2084
Lastpage :
2089
Abstract :
A low-cost, high-performance 
-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, with an associated gain of 22.5 dB and a standard deviation of 0.8 dB at the center frequency band of 9.5 GHz, have been measured.
-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, with an associated gain of 22.5 dB and a standard deviation of 0.8 dB at the center frequency band of 9.5 GHz, have been measured.Keywords :
Circuit synthesis; Costs; FETs; Gain; Gallium arsenide; Low-noise amplifiers; MMICs; Measurement standards; Noise figure; Radar antennas;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22873
Filename :
1486090
Link To Document :
