• DocumentCode
    1111820
  • Title

    Hot-carrier-induced degradation in p-channel LDD MOSFET´s

  • Author

    Tzou, Joseph J. ; Yao, C.C. ; Cheung, R. ; Chan, Hugo W K

  • Author_Institution
    Advanced Micro Devices, Inc., Sunnyvale, CA
  • Volume
    7
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    5
  • Lastpage
    7
  • Abstract
    When the p-channel MOSFET is stressed near the maximum substrate current Isub, the lifetime t (5-percent increase in the transconductance) follows tI_{sub} = A(I_{sub}/I_{d})^{-n} , with n = 2.0. A simple electron trapping model is proposed to explain the observed power law relationship. The current ratio I_{sub}/I_{d} and the maximum channel electric field decrease with increasing stress time, which is consistent with electron trapping in the oxide during the stress.
  • Keywords
    CMOS technology; Charge carrier processes; Degradation; Electron traps; Hot carriers; MOSFET circuits; Marine vehicles; Stress; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26273
  • Filename
    1486096
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111820