• DocumentCode
    1111856
  • Title

    Close drain—Source self-aligned high electron mobility transistors

  • Author

    Sheng, N.H. ; Chang, M.F. ; Lee, C.P. ; Miller, D.L. ; Chen, R.T.

  • Author_Institution
    Rockwell International Corporation, Thousand Oaks, CA
  • Volume
    7
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    11
  • Lastpage
    12
  • Abstract
    A new self-aligned process for high-electron mobility transistors has been developed. This process uses a photoresist dummy gate to self-align the ohmic contacts. The resulting structure has very closely spaced source and drain. For 1-µm gate transistors, device transconductances as high as 320 ms/mm have been achieved at room temperature.
  • Keywords
    Alloying; Fabrication; HEMTs; Impurities; MESFETs; MODFETs; Metallization; Ohmic contacts; Resists; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26275
  • Filename
    1486098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111856