• DocumentCode
    1111898
  • Title

    A 64K SRAM with high immunity from heavy ion induced latch-up

  • Author

    Shiono, Noboru ; Sakagawa, Yoshimitsu ; Matsumoto, Tadashi ; Akasaka, Yoichi

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan
  • Volume
    7
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    20
  • Lastpage
    22
  • Abstract
    A 64-kbit SRAM with high latch-up immunity has been developed with the application of a well-source structure combined with an epi-substrate. Heavy-ion beam exposure tests reveal that the device has high immunity from cosmic-ray induced latch-up, and the soft-error cross section is about 8.6 × 10-7cm2/(bit particle) for 73-MeV Ar ions.
  • Keywords
    Argon; CMOS technology; Equivalent circuits; Ion beams; Laboratories; Random access memory; Read-write memory; Space technology; Substrates; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26278
  • Filename
    1486101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111898