• DocumentCode
    1111907
  • Title

    Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers

  • Author

    Evans, Gary A. ; Goldstein, Bernard ; Butler, Jerome K.

  • Author_Institution
    David Sarnoff Research Center, Princeton, NJ, USA
  • Volume
    23
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    1900
  • Lastpage
    1908
  • Abstract
    Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequence, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off-axis, asymmetric far-field pattern.
  • Keywords
    Epitaxial growth; Gallium materials/lasers; Aluminum; Artificial intelligence; DH-HEMTs; Fourier transforms; Laser theory; Laser transitions; Optical losses; Power lasers; Semiconductor lasers; Substrates;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073260
  • Filename
    1073260