• DocumentCode
    1111919
  • Title

    A low dark current, large bandwidth Mott-barrier photodetector fabricated by quasi-ternary growth of GaAs

  • Author

    Schumacher, H. ; Narozny, P. ; Werres, Ch. ; Beneking, Heinz

  • Author_Institution
    Aachen University of Technology, Aachen, West Germany
  • Volume
    7
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    26
  • Lastpage
    27
  • Abstract
    The Double-Schottky-Interdigitated (DSI) photodetector has been shown to be a very-high-speed optical detector for λ < 0.9 µm. Its major drawback, a high dark current (1 µA at 10 V), has been overcome by quasi-ternary growth of the GaAs epitaxial layer, reducing the dark current by three orders of magnitude.
  • Keywords
    Bandwidth; Dark current; Detectors; Doping; Epitaxial layers; Etching; Gallium arsenide; Optical noise; Photodetectors; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26280
  • Filename
    1486103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111919