Title :
A low dark current, large bandwidth Mott-barrier photodetector fabricated by quasi-ternary growth of GaAs
Author :
Schumacher, H. ; Narozny, P. ; Werres, Ch. ; Beneking, Heinz
Author_Institution :
Aachen University of Technology, Aachen, West Germany
fDate :
1/1/1986 12:00:00 AM
Abstract :
The Double-Schottky-Interdigitated (DSI) photodetector has been shown to be a very-high-speed optical detector for λ < 0.9 µm. Its major drawback, a high dark current (1 µA at 10 V), has been overcome by quasi-ternary growth of the GaAs epitaxial layer, reducing the dark current by three orders of magnitude.
Keywords :
Bandwidth; Dark current; Detectors; Doping; Epitaxial layers; Etching; Gallium arsenide; Optical noise; Photodetectors; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26280
