Title :
Collector-up HBT´s fabricated by Be+and O+ion implantations
Author :
Adachi, Sadao ; Ishibashi, Tadao
Author_Institution :
Nippon Telegraph and Telephone Corporation, Kanagawa, Japan
fDate :
1/1/1986 12:00:00 AM
Abstract :
A novel collector-up (C-up) GaAs/AlGaAs heterojunction bipolar transistor (HBT) has been developed and initial device results presented. This device has its extrinsic base defined by Be + and O + implantations. The combination of Be + / O + implantations and heat-pulse annealing is leading to a considerable reduction in the parasitic current and capacitance in the extrinsic base region. Improved device structure and performance expected from this device are discussed in detail.
Keywords :
Annealing; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Implants; Ion implantation; Molecular beam epitaxial growth; P-n junctions; Parasitic capacitance; Plasma applications;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26282
