Title :
Low-temperature fabrication of MOSFET´s Utilizing a microwave-excited plasma oxidation technique
Author :
Kimura, Shin-ichiro ; Murakami, Eiichi ; Warabisako, Terunori ; Sunami, Hideo ; Tokuyama, Takashi
Author_Institution :
Hitachi Ltd., Kokubunji, Japan
fDate :
1/1/1986 12:00:00 AM
Abstract :
A microwave-excited plasma oxidation technique is applied to gate oxide formation of MOSFET´s and subsequent processes are carried out essentially at temperatures below 600°C. These MOSFET´s compare favorably with conventional ones fabricated by using a high-temperature processes in terms of field-effect mobility and subthreshold characteristics.
Keywords :
Annealing; Fabrication; Microwave theory and techniques; Oxidation; Plasma devices; Plasma immersion ion implantation; Plasma properties; Plasma temperature; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26284
