Title :
An 11-GHz GaAs frequency divider using source-coupled FET Logic
Author :
Takada, Tohru ; Kato, Naoki ; Ida, Masao
Author_Institution :
NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan
fDate :
1/1/1986 12:00:00 AM
Abstract :
A GaAs one-fourth frequency divider is fabricated to evaluate the ultrahigh-speed performance of source-coupled FET logic (SCFL) having normally-on FET´s with small negative V th values. High-transconductance (240 ms/mm) 1/2-µm gate-length FET´s and an air-bridge interconnection line technology are successfully developed. A maximum toggle frequency Fmaxof 11 GHz is achieved with a power dissipation of 149 mW. Furthermore, 9.7-GHz Fmaxwith low power dissipation of 52 mW was also obtained.
Keywords :
Capacitance; FETs; Fabrication; Frequency conversion; Gallium arsenide; Integrated circuit interconnections; Logic circuits; Power dissipation; Ring oscillators; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26287