• DocumentCode
    1111999
  • Title

    An 11-GHz GaAs frequency divider using source-coupled FET Logic

  • Author

    Takada, Tohru ; Kato, Naoki ; Ida, Masao

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan
  • Volume
    7
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    47
  • Lastpage
    48
  • Abstract
    A GaAs one-fourth frequency divider is fabricated to evaluate the ultrahigh-speed performance of source-coupled FET logic (SCFL) having normally-on FET´s with small negative V th values. High-transconductance (240 ms/mm) 1/2-µm gate-length FET´s and an air-bridge interconnection line technology are successfully developed. A maximum toggle frequency Fmaxof 11 GHz is achieved with a power dissipation of 149 mW. Furthermore, 9.7-GHz Fmaxwith low power dissipation of 52 mW was also obtained.
  • Keywords
    Capacitance; FETs; Fabrication; Frequency conversion; Gallium arsenide; Integrated circuit interconnections; Logic circuits; Power dissipation; Ring oscillators; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26287
  • Filename
    1486110
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111999