Title :
DC drift of X-cut LiNbO3 modulators
Author :
Nagata, Hirotoshi ; Li, Yagang ; Bosenberg, Walter R. ; Reiff, G.L.
Author_Institution :
JDS Uniphase Corp., Bloomfield, CT, USA
Abstract :
DC drift of unbuffered dc bias electrode port of x-cut LiNbO3 (LN) modulators is investigated. Unlike buffered LN modulators, their dc drift is irreversible and relatively suppressed after biased aging. Additionally, they show rolling-over-type drift and do not drift divergently. Extended temperature-voltage accelerated drift tests find temperature activation energy of 1.2 eV and a proportional relationship between drift rates and initially applied bias voltages. Such drift behaviors characteristic of unbuffered x-LN can demonstrate their high reliability with respect to dc bias drift.
Keywords :
electro-optical modulation; lithium compounds; reliability; DC bias electrode; DC drift; LiNbO3; X-cut LiNbO3 modulators; biased aging; reliability; rolling-over-type drift; Aging; Buffer layers; Electrodes; Intensity modulation; Life estimation; Life testing; Optical modulation; Performance evaluation; Temperature; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.834486
