• DocumentCode
    1112078
  • Title

    Lateral insulated gate transistors with improved latching characteristics

  • Author

    Robinson, Andrew L. ; Pattanayak, Deva N. ; Adler, Michael S. ; Baliga, B.Jayant ; Wildi, Eric J.

  • Author_Institution
    University of Michigan, Ann Arbor, MI
  • Volume
    7
  • Issue
    2
  • fYear
    1986
  • fDate
    2/1/1986 12:00:00 AM
  • Firstpage
    61
  • Lastpage
    63
  • Abstract
    Lateral insulated gate transistors (LIGT´s) were fabricated to study their applicability for power integrated circuits. Three independent techniques for improving LIGT latching current are described in this paper. Devices that latch at 510 A/cm2have been fabricated; devices that current-limit at 475 A/cm2without latching have also been demonstrated.
  • Keywords
    Anodes; Cathodes; Current density; Fabrication; Helium; Insulation; Latches; MOSFETs; Power integrated circuits; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26294
  • Filename
    1486117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112078