DocumentCode :
1112100
Title :
2-µm Gate-length enhancement mode InGaAs/InP:Fe-JFET´s with high transconductance
Author :
Albrecht, H. ; Bittnar, J. ; Lauterbach, Ch.
Author_Institution :
Siemans Research Laboratories, Munchen, Federal Republic of Germany
Volume :
7
Issue :
2
fYear :
1986
fDate :
2/1/1986 12:00:00 AM
Firstpage :
66
Lastpage :
68
Abstract :
Investigations of enhancement mode InGaAs junction field-effect transistors (JFET´s) grown on InP:Fe-substrate by liquid-phase epitaxy (LPE) are reported. The JFET´s with 2-µm gate length and 190- µm gate width show a threshold voltage of 0.4 V, a low drain current of < 10 µA at 0-V gate-source voltage and a maximum transconductance of 105 mS/mm. The measured transconductances of enhancement mode InGaAs/InP:Fe JFET´s with different gate lengths but with the same gate width and threshold voltage decrease proportional to the inverse gate length as expected from a constant drift mobility FET model.
Keywords :
Bonding; Bridge circuits; Indium gallium arsenide; Indium phosphide; Iron; Length measurement; Resists; Semiconductor device modeling; Threshold voltage; Transconductance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26296
Filename :
1486119
Link To Document :
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