2-µm Gate-length enhancement mode InGaAs/InP:Fe-JFET´s with high transconductance

Investigations of enhancement mode InGaAs junction field-effect transistors (JFET´s) grown on InP:Fe-substrate by liquid-phase epitaxy (LPE) are reported. The JFET´s with 2-µm gate length and 190- µm gate width show a threshold voltage of 0.4 V, a low drain current of < 10 µA at 0-V gate-source voltage and a maximum transconductance of 105 mS/mm. The measured transconductances of enhancement mode InGaAs/InP:Fe JFET´s with different gate lengths but with the same gate width and threshold voltage decrease proportional to the inverse gate length as expected from a constant drift mobility FET model.