Title :
GaAs power FET´s having the gate recess narrower than the gate
Author_Institution :
Texas Instruments, Inc., Dallas, TX
fDate :
2/1/1986 12:00:00 AM
Abstract :
GaAs power FET´s have been fabricated with the gate recess narrower than the gate. The fabrication process for this new channel structure is described and microwave performance is presented. The best device had greater than 1 W output power per millimeter gate width at 10 GHz.
Keywords :
Chemical processes; FETs; Fabrication; Gallium arsenide; Lithography; Microwave devices; Power generation; Resists; Shape; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26297
