• DocumentCode
    1112218
  • Title

    44-GHz monolithic GaAs FET amplifier

  • Author

    Kim, B. ; Tserng, H.Q. ; Shih, H.D.

  • Author_Institution
    Texas Instruments Incorporated, Central Research Laboratories, Dallas, TX
  • Volume
    7
  • Issue
    2
  • fYear
    1986
  • fDate
    2/1/1986 12:00:00 AM
  • Firstpage
    95
  • Lastpage
    97
  • Abstract
    Millimeter-wave monolithic GaAs FET amplifiers have been developed. These amplifiers were fabricated using FET´s with MBE-grown active layers and electron-beam defined sub-half-micrometer gates. Source groundings are provided through very low inductance via holes. The single-stage amplifier has achieved over a 10-dB gain at 44 GHz. A 300-µm gate-width amplifier has achieved an output power of 60 mW with a power density of 0.2 W per millimeter of gate width.
  • Keywords
    Epitaxial layers; Etching; FETs; Fabrication; Gallium arsenide; Grounding; Inductance; Millimeter wave circuits; Millimeter wave technology; Power amplifiers;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26306
  • Filename
    1486129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112218