DocumentCode :
1112284
Title :
Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substrates
Author :
Fischer, R. ; Klem, J. ; Peng, C.K. ; Gedymin, J.S. ; Morkoç, H.
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, IL
Volume :
7
Issue :
2
fYear :
1986
fDate :
2/1/1986 12:00:00 AM
Firstpage :
112
Lastpage :
114
Abstract :
(Al,Ga)As/GaAs heterojunction transistors (HBT\´s) grown on Si substrates have been characterized at microwave frequencies and have been found to perform extremely well. For emitter dimensions of 4 × 20 µm2, current gain cutoff frequencies 
GHz and maximum oscillation frequencies 
of 11.5 GHz have been obtained in a mesa-type structure. These values compare very well with the 
GHz and 
GHz which are the highest reported for HBT\´s on GaAs substrates in a nonmesa structure with an emitter width of ∼ 1.5 µm. These results clearly demonstrate the potential of HBT\´s in general at microwave frequencies, as well as the viability of GaAs on Si technology.
GHz and maximum oscillation frequencies of 11.5 GHz have been obtained in a mesa-type structure. These values compare very well with the GHz and GHz which are the highest reported for HBT\´s on GaAs substrates in a nonmesa structure with an emitter width of ∼ 1.5 µm. These results clearly demonstrate the potential of HBT\´s in general at microwave frequencies, as well as the viability of GaAs on Si technology.Keywords :
Bipolar transistors; Cutoff frequency; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Microwave devices; Microwave frequencies; Microwave transistors; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26311
Filename :
1486134
Link To Document :
