DocumentCode
1112284
Title
Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substrates
Author
Fischer, R. ; Klem, J. ; Peng, C.K. ; Gedymin, J.S. ; Morkoç, H.
Author_Institution
University of Illinois at Urbana-Champaign, Urbana, IL
Volume
7
Issue
2
fYear
1986
fDate
2/1/1986 12:00:00 AM
Firstpage
112
Lastpage
114
Abstract
(Al,Ga)As/GaAs heterojunction transistors (HBT\´s) grown on Si substrates have been characterized at microwave frequencies and have been found to perform extremely well. For emitter dimensions of 4 × 20 µm2, current gain cutoff frequencies 
GHz and maximum oscillation frequencies 
of 11.5 GHz have been obtained in a mesa-type structure. These values compare very well with the 
GHz and 
GHz which are the highest reported for HBT\´s on GaAs substrates in a nonmesa structure with an emitter width of ∼ 1.5 µm. These results clearly demonstrate the potential of HBT\´s in general at microwave frequencies, as well as the viability of GaAs on Si technology.
GHz and maximum oscillation frequencies of 11.5 GHz have been obtained in a mesa-type structure. These values compare very well with the GHz and GHz which are the highest reported for HBT\´s on GaAs substrates in a nonmesa structure with an emitter width of ∼ 1.5 µm. These results clearly demonstrate the potential of HBT\´s in general at microwave frequencies, as well as the viability of GaAs on Si technology.Keywords
Bipolar transistors; Cutoff frequency; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Microwave devices; Microwave frequencies; Microwave transistors; Silicon; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26311
Filename
1486134
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