• DocumentCode
    1112310
  • Title

    Trench transistor DRAM cell

  • Author

    Shichijo, H. ; Banerjee, Sanjay K. ; Malhi, Satwinder D S ; Pollack, G.P. ; Richardson, William F. ; Bordelon, D.M. ; Womack, Richard H. ; Elahy, Mostafa ; Wang, C.P. ; Gallia, James ; Davis, H.E. ; Shah, A.H. ; Chatterjee, P.K.

  • Author_Institution
    Texas Instruments Inc., Dallas, TX
  • Volume
    7
  • Issue
    2
  • fYear
    1986
  • fDate
    2/1/1986 12:00:00 AM
  • Firstpage
    119
  • Lastpage
    121
  • Abstract
    A new one-transistor DRAM cell with both the transistor and the capacitor fabricated on the trench sidewalls is described. With the signal stored on the polysilicon node surrounded by oxide, the cell is expected to have a high alpha particle immunity. The cell occupies only 9 µm2using 1-µm design rules. This cell size is sufficiently small to enable a 4-Mbit DRAM of reasonable chip size with these design rules, and possesses further scalability for 16-Mbit DRAM´s.
  • Keywords
    Alpha particles; Capacitors; Corrugated surfaces; Etching; Helium; Interface states; Random access memory; Scalability; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26313
  • Filename
    1486136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112310