SOI TFT´s with directly contacted ITO

N-channel Al-gate thin-film transistors (TFT´s) were fabricated on a silicon on insulator (SOI). Indium tin oxide (ITO) was deposited directly on the n+ silicon layer of the TFT. The contact resistance between the ITO and the n+ silicon layer increases with thermal annealing. The low temperature (200°C) lift-off method of ITO is applied to achieve high-quality TFT´s for active matrices in liquid crystal displays (LCD´s).