• DocumentCode
    1112410
  • Title

    Alloying of Al-Cu-Si metallization by rapid thermal annealing

  • Author

    Alvi, N.S. ; Kwong, D.L.

  • Author_Institution
    Delco Electronics, General Motors Corporation, Kokomo, IN
  • Volume
    7
  • Issue
    2
  • fYear
    1986
  • fDate
    2/1/1986 12:00:00 AM
  • Firstpage
    137
  • Lastpage
    139
  • Abstract
    Alloying of Al-Cu-Si metallization by rapid thermal annealing (RTA) has been studied. Low contact resistance (∼ 2 × 10-7Ω.cm2) with good uniformity across a wafer was reproducibly achieved. Al spiking into the Si substrate was contained with good shallow junction integrity and an enhanced suppression of hillock growth on the Al surface was demonstrated.
  • Keywords
    Alloying; Contact resistance; Electric variables measurement; Electrical resistance measurement; Electromigration; Metallization; Rapid thermal annealing; Substrates; Surface resistance; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26320
  • Filename
    1486143
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112410