Title :
Ridge waveguide AlGaAs/GaAs distributed feedback lasers
Author :
Noda, Susumu ; Kojima, Keisuke ; Mitsunaga, Kazumasa ; Kyuma, Kazuo ; Hamanaka, Kohichi ; Nakayama, Takashi
Author_Institution :
Central Research Laboratory, Mitsubishi Electronic Corp., Hyogo, Japan
fDate :
2/1/1987 12:00:00 AM
Abstract :
Ridge waveguide AlGaAs/GaAs distributed feedback lasers were fabricated by a two-step molecular beam epitaxy. A threshold current as low as 37 mA, which is the lowest ever reported, was obtained under a continuous wave condition at room temperature. The low threshold current is due to the larger coupling coefficient (91 cm-1) and a good current and optical confinement. The effects of the facet coatings were investigated and a high-power and a high-temperature operation was obtained. The polarization and the dynamic behavior were also investigated.
Keywords :
CW lasers; Distributed feedback (DFB) lasers; Epitaxial growth; Gallium materials/lasers; Distributed feedback devices; Gallium arsenide; Laser feedback; Molecular beam epitaxial growth; Optical coupling; Optical feedback; Optical waveguides; Temperature; Threshold current; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1987.1073306