A partially depleted absorber photodiode with graded doping injection regions

Author

Xiaowei Li ; Ning Li ; Demiguel, S. ; Xiaoguang Zheng ; Campbell, J.C. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA

Volume

16

Issue

10

fYear

2004

Firstpage

2326

Lastpage

2328

Abstract

A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In/sub 0.53/Ga/sub 0.47/As absorption region consists of a depletion layer and graded n- and p-type undepleted injection regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter photodiode exhibited an increase in bandwidth with increasing photocurrent. A saturation current bandwidth product of 990 mA /spl middot/ GHz and a responsivity of 0.67 A/W were achieved.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; microwave photonics; p-i-n photodiodes; 1.55 mum; 8 mum; 880 nm; In/sub 0.53/Ga/sub 0.47/As; backside illumination; graded doping injection regions; partially depleted absorber photodiode; responsivity; saturation current bandwidth product; Absorption; Bandwidth; Doping; Indium phosphide; Microwave photonics; Optical amplifiers; PIN photodiodes; Photoconductivity; Radio frequency; Thermal conductivity;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.834563

Filename

1336918