DocumentCode :
1112484
Title :
Fabrication and lasing characteristics of 0.67 µm GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy on
Author :
Kishino, Katsumi ; Harada, Akinori ; Kaneko, Yawara ; Kishino, Katsumi ; Harada, Atsushi ; Kaneko, Yuya
Author_Institution :
Department of Electrical and Electronics Engineering, Sophia University, Tokyo, Japan
Volume :
23
Issue :
2
fYear :
1987
fDate :
2/1/1987 12:00:00 AM
Firstpage :
180
Lastpage :
187
Abstract :
GaInAsP/AlGaAs lasers emitting at 0.67 μm in wavelength were fabricated on n-type
Keywords :
Visible lasers; Epitaxial growth; Fiber lasers; Gallium arsenide; Optical device fabrication; Optical fiber communication; Quantum well lasers; Semiconductor lasers; Substrates; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073313
Filename :
1073313
Link To Document :
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