DocumentCode :
1112505
Title :
The influence of screening on the auger coefficient of 1.3 µm InGaAsP lattice matched to InP
Author :
Yevick, David ; Bardyszewski, W.
Author_Institution :
Pennsylvania State University, University Park, PA
Volume :
23
Issue :
2
fYear :
1987
fDate :
2/1/1987 12:00:00 AM
Firstpage :
168
Lastpage :
170
Abstract :
We demonstrate numerically that calculations of the Auger coefficient of 1.3 μm InGaAsP are appreciably affected by the assumed screening parameters, especially at low temperatures and high carrier densities. We also generalize earlier theories of Auger processes to prove that the screening length should be set to infinity in such calculations.
Keywords :
Gallium materials/lasers; Charge carrier density; Electrons; H infinity control; Indium phosphide; Laser theory; Lattices; Physics; Quantum mechanics; Semiconductor lasers; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073315
Filename :
1073315
Link To Document :
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