Title :
Complementary GaAs SIS FET inverter using selective crystal regrowth technique by MBE
Author :
Matsumoto, Kazuhiko ; Ogura, Mutsuo ; Wada, Toshimi ; Yao, Takafumi ; Hayashi, Yutaka ; Hashizume, Nobuo ; Kato, Masanori ; Fukuhara, Noboru ; Hirashima, Hirofumi ; Miyashita, Toshiyuki
Author_Institution :
Electrotechnical Laboratory, Ibaraki, Japan
fDate :
3/1/1986 12:00:00 AM
Abstract :
A first complementary GaAs semiconductor-insulator-semiconductor (SIS) FET inverter has been fabricated by constructing n-channel and p-channel GaAs SIS FET´s on a single LEC GaAs substrate using MBE selective crystal regrowth technique. The fabricated inverter shows an inverter operation as a really low-power complementary inverter.
Keywords :
Energy consumption; FETs; Gallium arsenide; Insulation; Inverters; Sputter etching; Substrates; Temperature distribution; Temperature measurement; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26337
