Title :
SOI/SOI/Bulk-Si triple-level structure for three-dimensional devices
Author :
Sugahara, K. ; Nishimura, T. ; Kusunoki, S. ; Akasaka, Y. ; Nakata, H.
Author_Institution :
Mitsubishi Electric Corporation, Mizuhara Itami, Japan
fDate :
3/1/1986 12:00:00 AM
Abstract :
The fabrication procedure of the SOI/SOI/bulk-Si triple-level structure is developed by using the improved selective laser recrystallization technique and MOS LSI technology. The enlarged crystal stripes sandwiched by straight grain boundaries are produced on the planarized insulating film which overlies the device structure in bulk-Si, and also SOI/bulk-Si double-layered structure. The basic characteristics of MOSFET´s in a triple-level structure are evaluated.
Keywords :
Crystallization; Grain boundaries; Insulation; Large scale integration; Laser beams; Optical device fabrication; Research and development; Semiconductor films; Silicon on insulator technology; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26341
