Modeling of ion-implanted GaAs MESFET´s by the finite-element method

We discuss the results of a new two-dimensional (2-D) finite-element model for GaAs MESFET´s made by ion implantation. Several different devices are characterized by varying gate recess and doping profile. The simulation, in qualitative agreement with experimental findings, shows that a FET with a shallow gate recess exhibits a similar behavior to a FET with a deep implantation, i.e., an improvement in linearity, a higher pinch-off voltage, and a decrease in transconductance.