DocumentCode
1112745
Title
Modeling of ion-implanted GaAs MESFET´s by the finite-element method
Author
Song, N. ; Neikirk, Dean P. ; Itoh, Tatsuo
Author_Institution
University of Texas at Austin, Austin, TX
Volume
7
Issue
4
fYear
1986
fDate
4/1/1986 12:00:00 AM
Firstpage
208
Lastpage
210
Abstract
We discuss the results of a new two-dimensional (2-D) finite-element model for GaAs MESFET´s made by ion implantation. Several different devices are characterized by varying gate recess and doping profile. The simulation, in qualitative agreement with experimental findings, shows that a FET with a shallow gate recess exhibits a similar behavior to a FET with a deep implantation, i.e., an improvement in linearity, a higher pinch-off voltage, and a decrease in transconductance.
Keywords
Doping profiles; FETs; Finite element methods; Gallium arsenide; Ion implantation; Linearity; MESFETs; Semiconductor process modeling; Two dimensional displays; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26348
Filename
1486171
Link To Document