Title :
A GaAs integrated hall sensor/amplifier
Author :
Lepkowski, T.R. ; Shade, G. ; Kwok, S.P. ; Feng, Milton ; Dickens, Lawrence E. ; Laude, D.L. ; Schoendube, B.
fDate :
4/1/1986 12:00:00 AM
Abstract :
GaAs Hall sensor, amplifiers, comparator, and a TTL compatible output buffer were integerated into a three-terminal device. yields of 34 percent have been demonstrated for magnetic thresholds of +/- 450 G or less. Circuits are operable between -30 and +200°C.
Keywords :
FETs; Gallium arsenide; Geometry; Integrated circuit yield; Magnetic circuits; Magnetic materials; Magnetic sensors; Power dissipation; Switches; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26352
