Title :
Monolithically integrated n0.53Ga0.47As/InP direct-coupled junction field-effect transistor amplifier
Author :
Cheng, Julian ; Guth, G. ; Washington, M. ; Forrest, Stephen R. ; Wunder, R.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
fDate :
4/1/1986 12:00:00 AM
Abstract :
Monolithic integrated In0.53Ga0.47As/InP dc-coupled amplifiers have been built using self-aligned gate junction field-effect transistors (JFET´s) grown by molecular beam epitaxy (MBE). The amplifier consists of a common-source inverter stage and a source-follower buffer with diode level shifters. Using a 1-µm gate length, amplifiers with a gain of 12 dB have been fabricated.
Keywords :
FETs; Helium; Indium phosphide; Inverters; Monolithic integrated circuits; Optical device fabrication; Schottky diodes; Substrates; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26353
