• DocumentCode
    1112822
  • Title

    Radiation-dependent hot-carrier effects

  • Author

    Reich, Robert K. ; Schrankler, Jay W. ; Ju, Dong-Hyuk ; Holt, M.S. ; Kirchner, Gary D.

  • Author_Institution
    Solid-State Electronics Division, Colorado Springs, CO
  • Volume
    7
  • Issue
    4
  • fYear
    1986
  • fDate
    4/1/1986 12:00:00 AM
  • Firstpage
    235
  • Lastpage
    237
  • Abstract
    The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET´s has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.
  • Keywords
    Acceleration; Annealing; Degradation; Hot carrier effects; Hot carriers; Interface states; Ionizing radiation; MOSFET circuits; Stress; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26356
  • Filename
    1486179
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112822