A circuit-compatible model of ballistic carbon nanotube field-effect transistors

Author

Raychowdhury, Arijit ; Mukhopadhyay, Saibal ; Roy, Kaushik

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

23

Issue

10

fYear

2004

Firstpage

1411

Lastpage

1420

Abstract

Carbon nanotube field-effect transistors (CNFETs) are being extensively studied as possible successors to CMOS. Novel device structures have been fabricated and device simulators have been developed to estimate their performance in a sub-10-nm transistor era. This paper presents a novel method of circuit-compatible modeling of single-walled semiconducting CNFETs in their ultimate performance limit. For the first time, both the I-V and the C-V characteristics of the device have been efficiently modeled for circuit simulations. The model so developed has been used to simulate arithmetic and logic blocks using HSPICE.

Keywords

SPICE; ballistic transport; carbon nanotubes; digital arithmetic; field effect transistors; logic CAD; nanotube devices; semiconductor device models; 10 nm; C-V characteristics; CMOS; CNFET; CNT; HSPICE; I-V characteristics; arithmetic block simulation; ballistic scaling; carbon nanotube filled-effect transistors; circuit simulations; circuit-compatible model; circuit-compatible modeling; device simulator estimation; device structure fabrication; logic block simulation; single-walled semiconducting transistors; sub-10-nm transistor era; CNTFETs; Capacitance-voltage characteristics; Carbon nanotubes; Circuit simulation; Delay estimation; FETs; Numerical models; SPICE; Semiconductivity; Semiconductor device modeling; Ballistic scaling; CNT; carbon nanotube; circuit-compatible model;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.2004.835135

Filename

1336951