Subthreshold slope of thin-film SOI MOSFET´s

Silicon-on-insulator (SOI) n-channel transistors have been made in thin (90 nm) silicon films. Both modeling and experimental results show that excellent subthreshold slopes can be obtained (62 mV/ decade) when the silicon film thickness is smaller than the maximum depletion depth in the transistor channel. For comparison, the subthreshold slope of transistors made in thicker films is also reported.