Title :
Planar InP/InGaAs avalanche photodiodes with preferential lateral extended guard ring
Author :
Taguchi, Kenko ; Torikai, T. ; Sugimoto, Yoshimasa ; Makita, Kikuo ; Ishihara, Hisahiro ; Fujita, Sadao ; Minemura, Kouichi
Author_Institution :
NEC Corporation, Ibaraki, Japan
fDate :
4/1/1986 12:00:00 AM
Abstract :
High-speed and high-sensitivity planar InP/InGaAs avalanche photodiodes (APD´s) have been fabricated with a newly developed preferential lateral extended guard ring (PLEG). By employing the configuration, avalanche photodiode yield was markedly improved without edge breakdown. Received powers required to give 10-9bit-error rate (BER) at 1.55-1.57-µm wavelength were -44.5 and -37.4 dBm for 450 Mbit/s and 2 Gbit/s, respectively.
Keywords :
Acceleration; Avalanche photodiodes; Bit error rate; Breakdown voltage; Diodes; Electric breakdown; Histograms; Indium gallium arsenide; Indium phosphide; Monitoring;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26364
