Calculation of base-collector efficiency for hot-electron devices

In this paper a new accurate analysis of base-collector efficiency of hot-electron devices will be presented. This analysis is crucial to the estimation of gain of semiconductor-metal-semiconductor (SMS) amplifiers of BHETA family [1], induced base transistors (IBT) [2], two-dimensional electron gas base amplifier transistor family (TEG-BAT) [3], and other similar structures. The analysis in this paper provides more direct functional dependencies of base-collector efficiency on biasing, dimensions, and other parameters of these kind of devices.