• DocumentCode
    1112994
  • Title

    XeCl Excimer laser annealing used in the fabrication of poly-Si TFT´s

  • Author

    Sameshima, T. ; Usui, S. ; Sekiya, M.

  • Author_Institution
    Toyohashi University of Technology, Toyohashi, Japan
  • Volume
    7
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    276
  • Lastpage
    278
  • Abstract
    Mo-gate n-channel poly-Si thin-film transistors (TFT´s) have been fabricated for the first time at a low processing temperature of 260°C. A 500-1000-A-thick a-Si:H was successfully crystallized by XeCl excimer laser (308nm) annealing without heating a glass substrate. TFT´s were fabricated in the crystallized Si film. The channel mobility of the TFT was 180cm2/V.s when the a-Si:H was crystallized by annealing with a laser having an energy density of 200 mJ/cm2. This result shows that high-speed silicon devices can be fabricated at a low temperature using XeCl excimer laser annealing.
  • Keywords
    Annealing; Crystallization; Glass; Heating; Optical device fabrication; Semiconductor films; Silicon devices; Substrates; Temperature; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26372
  • Filename
    1486195
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112994