Resonant tunneling permeable base transistors with high transconductance

Author

Lind, Erik ; Lindström, Peter ; Wernersson, Lars-Erik

Author_Institution

Dept. of Solid State Phys., Lund Univ., Sweden

Volume

25

Issue

10

fYear

2004

Firstpage

678

Lastpage

680

Abstract

A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; permeable base transistors; resonant tunnelling transistors; semiconductor device testing; AlGaAs-GaAs-InGaAs; GaAs; collector-emitter current; gallium arsenide; gate voltage; permeable base transistors; resonant tunneling transistors; transconductance; transistor fabrication; tungsten; tunnel diode; Current density; Diodes; Fabrication; Gallium arsenide; Molecular beam epitaxial growth; Resonant tunneling devices; Substrates; Temperature; Transconductance; Tungsten; GaAs; Gallium arsenide; permeable base transistors; resonant tunneling transistors; tungsten;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.835159

Filename

1336969