Title :
Noise temperature and diffusion coefficient associated with the quasi-two-dimensional electron gas in an ungated MODFET structure
Author :
Whiteside, Christopher F. ; Bosman, Gijs ; Morkoc, H. ; Kopp, William
Author_Institution :
University of Florida, Gainesville, FL
fDate :
5/1/1986 12:00:00 AM
Abstract :
The ac noise temperature and diffusion coefficient of the quasi-two-dimensional electron gas in an ungated AlGaAs/GaAs MODFET structure were measured as a function of electric field at T = 300 K. Noise temperture data can be used in the modeling of MODFET noise behavior. The diffusion coefficient of the two-dimensional (2-D) electron gas is found to be less field dependent than that of bulk GaAs.
Keywords :
Electric fields; Electrons; Fluctuations; Gallium arsenide; HEMTs; MODFETs; Magnetic field measurement; Noise measurement; Ohmic contacts; Temperature dependence;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26378
