• DocumentCode
    1113059
  • Title

    Noise temperature and diffusion coefficient associated with the quasi-two-dimensional electron gas in an ungated MODFET structure

  • Author

    Whiteside, Christopher F. ; Bosman, Gijs ; Morkoc, H. ; Kopp, William

  • Author_Institution
    University of Florida, Gainesville, FL
  • Volume
    7
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    294
  • Lastpage
    295
  • Abstract
    The ac noise temperature and diffusion coefficient of the quasi-two-dimensional electron gas in an ungated AlGaAs/GaAs MODFET structure were measured as a function of electric field at T = 300 K. Noise temperture data can be used in the modeling of MODFET noise behavior. The diffusion coefficient of the two-dimensional (2-D) electron gas is found to be less field dependent than that of bulk GaAs.
  • Keywords
    Electric fields; Electrons; Fluctuations; Gallium arsenide; HEMTs; MODFETs; Magnetic field measurement; Noise measurement; Ohmic contacts; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26378
  • Filename
    1486201
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113059