Title :
Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor deposition
Author :
Dupuis, Russell D. ; Velebir, J.R. ; Campbell, Joe C. ; Qua, G.J.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
fDate :
5/1/1986 12:00:00 AM
Abstract :
InP/InGaAs avalanche photodiodes with separate absorption and multiplication regions (SAM APD´s) have been fabricated from wafers grown by atmospheric-pressure metalorganic chemical vapor deposition. These APD´s exhibit low dark current and good quantum efficiency. The pulse response exhibits the two-component response typical of the SAM-APD structure. The slow component is 6 ns and the fast component is 100 ps.
Keywords :
Absorption; Avalanche photodiodes; Boundary conditions; Chemical vapor deposition; Dark current; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26379
