• DocumentCode
    1113070
  • Title

    Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor deposition

  • Author

    Dupuis, Russell D. ; Velebir, J.R. ; Campbell, Joe C. ; Qua, G.J.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ
  • Volume
    7
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    296
  • Lastpage
    298
  • Abstract
    InP/InGaAs avalanche photodiodes with separate absorption and multiplication regions (SAM APD´s) have been fabricated from wafers grown by atmospheric-pressure metalorganic chemical vapor deposition. These APD´s exhibit low dark current and good quantum efficiency. The pulse response exhibits the two-component response typical of the SAM-APD structure. The slow component is 6 ns and the fast component is 100 ps.
  • Keywords
    Absorption; Avalanche photodiodes; Boundary conditions; Chemical vapor deposition; Dark current; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26379
  • Filename
    1486202
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113070