• DocumentCode
    1113111
  • Title

    Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET´s

  • Author

    Pearsall, T.P. ; Bean, John C.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ
  • Volume
    7
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    308
  • Lastpage
    310
  • Abstract
    We report enhancement- and depletion-mode p-channel modulation-doped field-effect transistors (FET´s) in Si. Si/GexSi1-xheterostructures were grown by molecular-beam epitaxy (MBE) with one-dimensional confinement of holes at the heterostructure interfaces. Transconductances of 2.5 and 3.2 mS/mm were measured at 300 K for enhancement- and depletion-mode devices, respectively, in good agreement with transistor modeling predictions for p-channel devices using measured material parameters.
  • Keywords
    Charge measurement; Current measurement; Electrical resistance measurement; Energy states; Epitaxial layers; Etching; FETs; Structural engineering; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26383
  • Filename
    1486206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113111