• DocumentCode
    1113121
  • Title

    A new channel-doping technique for high-voltage depletion-mode power MOSFET´s

  • Author

    Ueda, D. ; Shimano, A. ; Kitamura, I. ; Takagi, H. ; Kano, G.

  • Author_Institution
    Matsushita Electronics Corporation, Osaka, Japan
  • Volume
    7
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    311
  • Lastpage
    313
  • Abstract
    A new channel-doping technique for high-voltage depletion-mode double-diffused MOSFET (DMOSFET) is demonstrated. The technique that is used is channel doping performed at the surface of the laterally diffused body region in a self-aligned manner. Decrease of the breakdown voltage due to decrease of the threshold voltage is successfully prevented by using the new technique. A 1050-V DMOSFET was experimentally fabricated with a negative threshold voltage of -2 V.
  • Keywords
    Body regions; Doping; Etching; FETs; Impurities; Ion implantation; MOSFET circuits; Oxidation; Silicon compounds; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26384
  • Filename
    1486207
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113121