Title :
A new channel-doping technique for high-voltage depletion-mode power MOSFET´s
Author :
Ueda, D. ; Shimano, A. ; Kitamura, I. ; Takagi, H. ; Kano, G.
Author_Institution :
Matsushita Electronics Corporation, Osaka, Japan
fDate :
5/1/1986 12:00:00 AM
Abstract :
A new channel-doping technique for high-voltage depletion-mode double-diffused MOSFET (DMOSFET) is demonstrated. The technique that is used is channel doping performed at the surface of the laterally diffused body region in a self-aligned manner. Decrease of the breakdown voltage due to decrease of the threshold voltage is successfully prevented by using the new technique. A 1050-V DMOSFET was experimentally fabricated with a negative threshold voltage of -2 V.
Keywords :
Body regions; Doping; Etching; FETs; Impurities; Ion implantation; MOSFET circuits; Oxidation; Silicon compounds; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26384
