• DocumentCode
    1113148
  • Title

    InP-metal barrier junctions with improved I-V characteristics

  • Author

    Pearsall, T.P. ; DiGiuseppe, M.A.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ
  • Volume
    7
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    317
  • Lastpage
    319
  • Abstract
    A new contact for FET gate deposition, whose technology is similar to that for MESFET´s, is demonstrated in InP. We have measured a significant reduction in reverse leakage current achieving JR= 1 × 10-3A/cm-2at 300 K at -2 V and an improved forward turn-on voltage, enhanced from 0.25 to 1.0 V at 300 K compared to conventional Schottky barriers on InP. We have used this barrier to form the gate of n-channel FET´s in InP.
  • Keywords
    FETs; Gold; Indium phosphide; Inorganic materials; Leakage current; MESFETs; P-n junctions; Schottky barriers; Semiconductor materials; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26386
  • Filename
    1486209
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113148