DocumentCode :
1113170
Title :
Radiation-hardened silicon-on-insulator complementary junction field-effect transistors
Author :
Bor-Yeu ; Choi, Hong K.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
Volume :
7
Issue :
5
fYear :
1986
fDate :
5/1/1986 12:00:00 AM
Firstpage :
324
Lastpage :
326
Abstract :
The effects of total-dose radiation have been investigated for complementary junction field-effect transistors fabricated in zone-melting recrystallized Si films on SiO2-coated Si substrates. With a - 5-V bias applied to the Si substrate during irradiation and device operation, both n- and p-channel devices show low threshold-voltage shift (<-0.09 and <-0.12 V, respectively), low leakage currents (<- 1- and <3-pA/µm channel width, respectively) and small transconductance degradation (<15 percent) for total doses up to 108rad (Si).
Keywords :
CMOS technology; Dielectric substrates; Diodes; FETs; JFET circuits; Leakage current; P-n junctions; Semiconductor films; Silicon on insulator technology; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26388
Filename :
1486211
Link To Document :
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