Radiation-hardened silicon-on-insulator complementary junction field-effect transistors

The effects of total-dose radiation have been investigated for complementary junction field-effect transistors fabricated in zone-melting recrystallized Si films on SiO2-coated Si substrates. With a - 5-V bias applied to the Si substrate during irradiation and device operation, both n- and p-channel devices show low threshold-voltage shift (<-0.09 and <-0.12 V, respectively), low leakage currents (<- 1- and <3-pA/µm channel width, respectively) and small transconductance degradation (<15 percent) for total doses up to 10⁸rad (Si).