DocumentCode
1113193
Title
Avalanche gain in Gex Si1-x /Si infrared waveguide detectors
Author
Pearsall, T.P. ; Temkin, H. ; Bean, John C. ; Luryi, Serge
Author_Institution
AT&T Bell Laboratories, Murray Hill, NJ
Volume
7
Issue
5
fYear
1986
fDate
5/1/1986 12:00:00 AM
Firstpage
330
Lastpage
332
Abstract
Avalanche gain in Gex Si1-x /Si heterostructures photodiodes has been measured for the first time. Absorption of infrared radiation occurs in a Gex Si1-x /Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding layers. Multiplication factors as high as 50 have been obtained for a 1.1-µm wavelength response (x = 0.2). The external absolute sensitivity operating at a multiplication of 10 is 1.1 A/W at 1.3 µm for an uncoated device.
Keywords
Absorption; Avalanche photodiodes; Laser sintering; Optical buffering; Optical fiber communication; Optical materials; Optical noise; Optical superlattices; Optical waveguides; Semiconductor device noise;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26390
Filename
1486213
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