Title :
Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures
Author :
Ackelid, Ulf ; Armgarth, M. ; Spetz, A. ; Lundström, I.
Author_Institution :
Linköping Institute of Technology, Linköping, Sweden
fDate :
6/1/1986 12:00:00 AM
Abstract :
Hydrogen-sensitive palladium-gate MOS structures heated above 150°C show sensitivity to ethanol vapor. The effect is probably due to catalytic dehydrogenation of adsorbed ethanol molecules on the surface of the palladium gate.
Keywords :
Atomic layer deposition; Capacitance; Chemical technology; Ethanol; Hydrogen; MOS capacitors; Palladium; Physics; Temperature sensors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26398
