• DocumentCode
    111329
  • Title

    A 15 \\mu{\\rm W} 5.5 kS/s Resistive Sensor Readout Circuit with 7.6 ENOB

  • Author

    Ghanad, Mehrdad A. ; Green, Michael M. ; Dehollain, Catherine

  • Author_Institution
    RFIC Group, Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
  • Volume
    61
  • Issue
    12
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    3321
  • Lastpage
    3329
  • Abstract
    A low power SAR logic-based resistive sensor readout circuit is proposed. A high sensitivity thermistor is used for local temperature measurements. The need for a low-noise front-end voltage amplifier is avoided by employing time-domain operation. In each operation step the sensor resistance is compared with the value of a reference resistive DAC which is implemented on chip. Therefore no stable, temperature compensated reference voltage is needed for operation. Furthermore the chip is operational with supply voltages ranging from 1.2 to 1.8 volts. Detailed analyses of the circuit gain and noise are provided. In addition, the effect of circuit topology on the noise performance is discussed. The effect of 1/f noise on accuracy of the circuit is also negligible due to resetting the charge-integrating capacitor after each comparison. A prototype chip is fabricated in 0.18- μm CMOS. The circuit dissipates 15 μW with 5.5 kS/s conversion rate from a 1.5 V supply. The complete interface circuit has 14 pJ/c-s figure of merit and 7.6 effective number of bits.
  • Keywords
    1/f noise; CMOS logic circuits; biosensors; digital-analogue conversion; flip-flops; integrated circuit noise; low-power electronics; prosthetics; readout electronics; thermistors; 1/f noise; charge-integrating capacitor; circuit gain; circuit noise; circuit topology; complete interface circuit; high sensitivity thermistor; local temperature measurements; low power SAR logic-based resistive sensor readout circuit; low-noise front-end voltage amplifier; noise performance; power 15 muW; reference resistive DAC; sensor resistance; size 0.18 mum; time-domain operation; voltage 1.2 V to 1.8 V; Delays; Noise; Resistance; Resistors; Temperature measurement; Temperature sensors; Transistors; ADC; integrating; low power; medical implants; noise; sensor readout; successive approximation register (SAR); time domain comparator;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2014.2334932
  • Filename
    6866240